G-line photoresist

G-line photoresist is a photosensitive material specially developed for g-line exposure using 436 nm ultraviolet mercury lamps. Its core working mechanism relies on the conventional novolak resin/diazonaphthoquinone (DNQ) photosensitive system, classifying it as a non-chemically amplified photoresist. Upon exposure, diazonaphthoquinone undergoes a photochemical reaction to generate carboxylic acid, rendering exposed regions soluble in alkaline developer and enabling pattern transfer. As no chemi

产品详情

Ⅰ、EPG 562 series                                           

EPG 567 series

EPG 5650 series 

Resist Film Thickness:7~20um

Property:

1. Excellent ability to resist dry etching;

2. Different viscosity and profile shape series to meet a variety of customer needs.


Ⅱ、Application Fields:

1. Discrete Semiconductors and Power Chips: 

Widely adopted in the fabrication of components such as diodes and transistors.


2. Micro-Electro-Mechanical Systems (MEMS): 

G-line lithography serves as a mainstream and reliable solution for the processing of micron-scale structures including MEMS sensors and microfluidic devices.


3. Analog and Mixed-Signal ICs: 

Deployed in the production of analog and radio frequency (RF) circuits that do not demand ultra-fine linewidths yet prioritize device matching and process stability.


4. Advanced Packaging: 

A key candidate material for lithography processes in advanced technologies such as Wafer Level Packaging (WLP), Fan-out Packaging and Through-Silicon Via (TSV).


5. Front-End IC Manufacturing: 

G-line photoresists retain limited applications in certain conventional CMOS processes, including the production of power management ICs and display driver ICs.


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