KrF photoresist

KrF photoresist is a critical material for semiconductor manufacturing that adopts chemical amplification resist (CAR) technology and is exposed by 248 nm krypton fluoride (KrF) excimer laser. It acts as a core bridge connecting mature manufacturing processes (i-line) and advanced technology nodes (ArF/EUV). As an essential photosensitive material for high-precision pattern transfer in semiconductor fabrication, KrF photoresist features chemical amplification (CAR) as its core technical advantag

产品详情

Ⅰ、EPK 7008 Series

Resist Film Thickness:0.8~2.6um

Property:

1. High resolution @0.2um;

2. Excellent etching resistance;

3. High thermal resistance.


Ⅱ、Application Fields

1.Logic Chips:

Applied to lithography for key layers such as Poly, Active Area (AA), Contact and Metal at technology nodes from 90 nm to 28 nm.


2. Memory Chips: 

Used for gate and bit-line patterning of DRAM and 3D NAND Flash with 90–130 nm process nodes, and serves as the mainstream photoresist for global DRAM and 3D NAND production lines.


3. Power Devices: 

Widely utilized in thick-film lithography and fine circuit processing of IGBTs and MOSFETs. Its excellent etching resistance ensures the reliability of automotive electronics and industrial power supplies.


4. CMOS Image Sensors (CIS): 

Adopted for pixel array and circuit fabrication at the 130 nm node. Its high-resolution performance helps improve image quality.


5. Advanced Packaging: 

Specially applied to thick mask lithography for high-aspect-ratio patterns including Through-Silicon Vias (TSV) and Fan-Out Wafer Level Packaging (FOWLP), acting as a vital material to realize 2.5D/3D packaging.


6. Ion Implantation:

 Serves as implantation masks to resist high-energy ion bombardment and achieve precise control of doping areas.




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