SiC Substrate Polishing Slurry

SiC Substrate Polishing Slurry is a water-based chemical mechanical polishing (CMP) slurry exclusively for single-crystal 4H/6H-SiC substrates of third-generation semiconductors, acting as a core consumable for automotive-grade power semiconductors, RF devices and new energy inverters.SiC boasts a Mohs hardness of 9.5 and extremely strong chemical inertness. Simple mechanical grinding will easily cause deep subsurface damage, scratches and lattice defects, which directly trigger leakage current

产品详情

Application Fields

1. Mass production lines for SiC wafers

2. Special-shaped SiC components

3. SiC AR-coated wafers


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